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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION *With TO-3P(I) package *High power dissipations APPLICATIONS *For audio and general purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE -140 -140 -5 -10 -2 100 150 -55~150 UNIT V V V A A W Open collector PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1146 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -140 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA ,IC=0 IC=-5A; IB=-0.5A -5 V Collector-emitter saturation voltage -2.0 V A A ICBO Collector cut-off current VCB=-140V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT Transition frequency IC=-0.5A ; VCE=-10V 70 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1146 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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